UO Process Recipes 1999-2000

BN activation

950 †C for 30 min. 1scfh oxygen

B diffusion

975 †C for 35 min. 1scfh nitrogen

B-glass etch for 15 sec, water rinse, blow dry

4 pt. Probe = ~ 50 ohms/sq.

Field oxide

1100 †C 30 min., 1scfh oxygen bubbled through water at 90 †C

Gate oxide

1000 †C for 30 min. 1scfh oxygen, 10 min. 1scfh nitrogen (anneal)

Photoresist strip

Acetone 1 min

Water dip

RCA 5 min

RCA clean

50 mL water

10 mL hydrogen peroxide

10 mL ammonium hydroxide

Oxide etch

Water rinse 15 sec.

Buffered HF soak 3 min.

Water rinse 15 sec.

B-glass etch

100 mL water

100 mL nitric acid

1 mL HF

Spin coating

To a stationary chip, apply enough photoresist to the center of the chip to coat to within ~3 mm. of edge, accelerate to and spin at 4,000 rpm for 60 sec.

Softbake

60 sec. on 115 †C hotplate